Silicon bare wafers
Product Details
220 +/- 10
Micron
Thickness
The Chohralsky
Cultivation method
Geometrical parametres:
(0,1-5)?1017
cm-3
Concentration of carbon, not more than
1?1018
cm-3
Concentration of oxygen, not more than
12
microsecond
Time of life, not less than
1- 3
Ohm?cm
Resistivity
Electrophysical parametres:
Value
Unit of measure
|
Parameter Quantity: 1000 kg Place of inspection: Moscow, Russia Origin: Russia We offer from our stock Monocrystalline silicon wafers, Bare. |
