IRF7313 Power MOSFET
Product Details
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| Parameter | Value |
| Package | SO-8 |
| Circuit | DUAL N |
| |BVDSS| | 30 |
| VGs Max (V) | 20 |
| RDS(on) 4.5V N-Channnel (mOhms) | 46.0 |
| RDS(on) 10V N-Channnel (mOhms) | 29.0 |
| ID @ TA = 25C N-Channel (A) | 6.5 |
| ID @ TA = 70C N-Channel (A) | 5.2 |
| Qg Typ N-Channel (nC) | 22.0 |
| Qgd Typ N-Channel (nC) | 6.4 |
| Rth(JA) (K/W) | 62.5 |
| Power Dissipation (W) | 2.0 |
| Part Status | Active |
| PbF | PbF Option Available |
Specifications
ICs of IRF7313
ICs of IRF7313
1.30V Dual N-Channel HEXFET Power MOSFET in a SO-8 .
2.Pb-Free
- Supply Voltage:30V
- Model Number:IRF7313
- Brand Name:IR
- Place of Origin:United States
- Country:China (Mainland)
- telephone:86-10-62101201
| Delivery Time: | stock |
| Package: | Bag |
| Supply Ability: | 10000 Piece/Pieces per Week |
| Minimum Order Quantity: | 100 Piece/Pieces |
| Payment Terms: | T/T,Western Union |
| Port: | BeiJing |
| Supply Voltage: | 30V |
| Model Number: | IRF7313 |
| Brand Name: | IR |
| Place of Origin: | United States |
