IRLML6302TRPBF IRLML6302 Power MOSFET component
Product Details
| Parameter | Value |
| Package | Micro 3/ SOT-23 |
| Circuit | Discrete |
| VBRDSS (V) | -20 |
| VGs Max (V) | 12 |
| RDS(on) Max 2.7V (mOhms) | 900.0 |
| RDS(on) Max 4.5V (mOhms) | 600.0 |
| ID @ TA = 25C (A) | -0.62 |
| ID @ TA = 70C (A) | -4.8 |
| Qg Typ (nC) | 2.4 |
| Qgd Typ (nC) | 1.0 |
| Rth(JC) (K/W) | 230 (JA) |
| Power Dissipation @ TA = 25C (W) | 0.54 |
| PbF | PbF Option Available |
We also provide many more ICs.MOS,Diodes,Transistor,Military products in stock with High Quality,Fast delivery,Long Warranty.
Specifications
ICs of IRLML6302TRPBF
ICs of IRLML6302TRPBF
1.-20V Single P-Channel HEXFET Power MOSFET in a Micro
2.Pb-Free
- Brand Name:IR
- Place of Origin:United States
- Model Number:IRLML6302TRPBF
- Country:China (Mainland)
- telephone:86-10-62101201
| Delivery Time: | stock |
| Package: | Bag |
| Supply Ability: | 10000 Piece/Pieces per Week |
| Minimum Order Quantity: | 100 Piece/Pieces |
| Payment Terms: | T/T,Western Union |
| Port: | BeiJing |
| Brand Name: | IR |
| Place of Origin: | United States |
| Model Number: | IRLML6302TRPBF |
