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Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode Low series resistance High capacitance ratio Designed for low tuning voltage operation for VCO's in mobile communications equipment Fo
High radiometric power per LED Very long operating life(up to 100k hours) Good color uniformity Features High radiometric power per LED Very long operating life(up to 100k hours) Good color uniformity More energy efficient than incandescent and most halogen lamps Low Voltage DC o
CDSV6-4448TI-G 80 80 200 500 SOT-363 3000-T&R 7" Part Number VRRM(V) VR(V) PD(mW) IF(mA) Package Packing CDSH3-16-G 85 85 150 155 SOT-523 3000-T&R 7" CDSH3-21-G 200 200 150 200 SOT-523 3000-T&R 7" CDSH3-56-G 85 85 150 155 SOT-523 3000-T&R 7" CDSH3-70-G 85 85 150 155 SOT-523 3000-
BAS40WS 1000 1000 0.55 0.45 - 0.85 40 20 100 SOD-123 SOD-123FL SMD SMD SS1040 SS1020FL SS10100FL NEW 450 500 500 20 / 200 1.0 0.385 - 0.51 0.385 - 0.51 0.37 / 0.60 0.39 - 0.41 20 40 20 40 20 40 40 60 SOD-123FL SOD-123 SOD-123 SOD-123 SMD SMD SMD SMD SS0520FL SS0540FL NEW SS0520 S
Quantity 1 2-4 5-24 Prices $ 339.00 $ 297.00 $ 265.00 To order use part number PLD5000
Low Forward Voltage Drop Product Description These Schottky barrier diodes are optimized fro low forward voltage drop and low leakage current. The DSN-2 (Dual Silicon No-lead) package is a chip level package using solderable metal contacts under the package similar to DFN style p
optimized for fast and soft turn-off -small reverse recovery charge -high di/dt capability at turn-off D 250 H 900 D 320 D 490 ?C A T VJM I FSM I FAVM ?C A T VJM I FSM -optimized for fast and soft turn-off -small reverse recovery charge -high di/dt capability at turn-off -range o
For surface mounted applications in order to optimize board space FEATURES Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent clamping capability Repetition rate (duty cycle) 0.01% Fast response time typically less than 1.0 ps from 0 vol
JSC VSP-Mikron develop and manufacture ultrafast diodes dice (UFD). PRELIMINARY SPECIFICATION 149. ULTRAFAST DIODE KD-1060UF. 10A/600V. Die Size-98*98mil. Electrical Characteristics Symbol Unit Spec. limit Die Sort Breakdown Voltage @ IR=0,10mA VB V 600 620 Average Rectified Forw
BVU-439QT9 634/629 2.3 2.8 600 1680 100/40 Part No. Chip Lens Type Vf(V) at If=20mA Iv(mcd) @20mA Viewing Angle Material
Reverse Voltage VR(V) 15 . Small Package. Application VCO for CB, C/P PLL Application. Features . Low Series Resistance rs=0.3ohm (typ.).
IN4001 IN4002 IN4003 IN4004 IN4005 IN4006 IN4007 DO-41 SILICON RECTIFIERS 1.0 AMPERE TO 6 AMPERES??50 VOLTS TO 1000 VOLTS
Rectifier diode,50-1000V.1-6A 6A 6A05-6A10, P600A-P600M. 3A 1N5401-1N5408. 2A RL201-RL207. 1.5A 1N5391-1N5399. 1A 1N4001-1N4007. Rectifier diode,50-1000V.
Max. Reverse Current 30mA Max. Forward Current 50uA Max. Forward Voltage 2.4 Package Type Surface Mount Type LED Model Number TOP3528EMRC-P Brand Name YOHUA Place of Origin Taiwan LUMINOUS INTENSITY 700-1100mcd @ 20mA COLOR WARM WHITE WAVELENGTH 620~632nm VIEW ANGLE 120 degre
Delivery Time 3Days Supply Ability 100000 Piece/Pieces per Month Minimum Order Quantity 10 Piece/Pieces Payment Terms T/T,Western Union Correlated Color Temperature 2500K-18000K Light Color Scanning Input Voltage DC16-18V Model Number 20W Correlated Color Temperature 2500K-18000K
