For reference only. Contents above are subject to change without notice AlGaInP Visible Laser Diode ADL-63058TLDATE2007/9/17 Ver 4.0* For reference only. Contents above are subject to change without notice.635nm 5mW Low Iop 28mA" Features1. Low Iop2. High precision assembly3. Hig
LD-1060, LD-1460, LD-1650 Laser Diodes LD-1060, LD-1460, LD-1650 Series of devices are quantum well structure fabricated MOCVD technique in (10602?1650) nm spectral range. Low threshold current and high slope efficiency contribute to low operating currents, enhancing reliability.
Delivery Time 2 weeks after T/T Package Inner package Anti-static bagsOuter package Carton protection Supply Ability 1,000,000 Piece/Pieces per Week Payment Terms T/T,Western Union Max. Reverse Current 10uA Max. Forward Current 20mA Max. Reverse Voltage 5V Max. Forward Voltage 1.
BAV99 10 5.0 / 10 10 10 1.0 0.72 / 1.0 1.0 1.0 100 100 75 100 MiniMELF SOD-123 SOD-123 DO-35 Glass SMD SMD SMD Axial LL4148 1N4448W 1N4151W 1N4148 500 100 200 10 1.0 1.0 1.0 120 250 50 100 SOD-123 SOD-123 SOD-123 SMD SMD SMD BAV19W BAV21W 1N4150W 1N4148W 410 10 1.0 / 100 1.0 / 10
CDSV3-19-G 100 100 200 200 SOT-323 3000-T&R 7" Part Number V RRM (V) V R (V) P D (mW) I F (mA) Package Packing CDSU4148 100 75 150 150 0603 (1608) 4000-T&R 7" CDSU4448 100 80 150 125 0603 (1608) 4000-T&R 7" CDSL4148-G 75 75 500 150 MiniMELF 2500-T&R 7" CDSW4148-G 75 75 400 150 SO
MIE-414L3 GaAlAs 880 1.40 1.60 2 GaAlAs/ GaAs 940 Water Clear 1.30 1.50 20 3 25 MIE-404H4 GaAlAs 850 1.50 1.70 3 MIE-404L3 GaAlAs 880 1.40 1.60 2.6 MIE-414A4 GaAlAs/ GaAs 940 1.30 1.50 2.1 40 MIE-414H4 GaAlAs 850 1.50 1.70 2.4 MIE-414L3 GaAlAs 880 1.40 1.60 2
a photoconductive type that lowers resistance by input of infrared light and a photovoltaic type having a PN junction. MCT detectors are available in two operating types a photoconductive type that lowers resistance by input of infrared light and a photovoltaic type having a PN j
Max. Forward Current 20mA Max. Reverse Voltage 5v Max. Forward Voltage 2.0v Type LED Model Number LUY302H43 Brand Name RG Place of Origin Jiangsu China (Mainland) Max. Forward Current 20mA Max. Reverse Voltage 5v Max. Forward Voltage 2.0v Type LED Model Number LUY302H43 Brand Nam
With ISO9002 approved manufacturing facilities & ULs certified products, it leads to the assurance of quality. With our high volume supply & strong partnership with several OEM manufacturers in Asia, it enhances our position in very reasonable costing to customers. With ISO9002 a
Delivery Time 1-30 days. We have stock. Minimum Order Quantity 1 Piece/Pieces Payment Terms T/T,PayPal Port FOB Fob Price US$4.778-6.809FOB Max. Forward Current 1000mA Max. Forward Voltage 3.9V Package Type Throught Hole Type LED Model Number 500105 Brand Name Cree Place of Origi
Delivery Time 3--5 days Package 49*34.5*25.5 Supply Ability 3000000.00 Piece/Pieces per Day Minimum Order Quantity 100000.00 Piece/Pieces Payment Terms T/T Port shenzhen Model Number 1N4004 DIODE Brand Name JR Place of Origin Guangdong China (Mainland) Model Number 1N4004 DIODE B
Delivery Time 10 DAYS Supply Ability 5000000 Piece/Pieces per Month Minimum Order Quantity 5000 Piece/Pieces Payment Terms L/C,T/T Package Type Throught Hole Type Rectifier Diode Brand Name ANY Place of Origin Jiangsu China (Mainland) Package Type Throught Hole Type Rectifier Dio
Package Type DO5 Type Rectifier Diode Model Number 1N1183,1N1184,1N1185,1N1186,1N1187,1N1188,1N1189,1N1190,1N3765,1N3766, Brand Name naina,NSL Place of Origin Uttar Pradesh India Package Type DO5 Type Rectifier Diode Model Number 1N1183,1N1184,1N1185,1N1186,1N118... Brand Name na
Payment Terms L/C,T/T,Western Union Package Type Throught Hole Type Laser Diode Model Number DLC-165-07-5T7 Package Type Throught Hole Type Laser Diode Model Number DLC-165-07-5T7 7mw, 650nm Laser Diode in 5.6mm size (TO-18 Package) 6. Dimension 5.6mm 5. Temperature (Top) -10~+70
Payment Terms T/T Place of Origin Shanghai China (Mainland) Place of Origin Shanghai China (Mainland) The packages include SMA, SMB, SMC, D-Pack, D2-Pack, etc. -To manufacture products with your logo printing upon your demand is available and welcome. equipments allowing us to pr
Delivery Time IN STOCK Minimum Order Quantity 2 Piece/Pieces Payment Terms T/T,VISA, MASTER CARD,AMERICAN EXPRESS, PAYPAL Port NEWARK Model Number 1N3717 Brand Name AMERICAN MICROSEMICONDUCTOR Model Number 1N3717 Brand Name AMERICAN MICROSEMICONDUCTOR General Purpose Tunnel Diode
Package Type Other Type Switching Diode Model Number 1SS265 Brand Name KINGWELL Place of Origin Taiwan Package Type Other Type Switching Diode Model Number 1SS265 Brand Name KINGWELL Place of Origin Taiwan 1SS265 Band Switching Diode Silicon epitaxial planar Construction Band Swi
surface mounted applications in order to optimize board space surface mounted applications in order to optimize board space Glass passivated junction Built-in strain relief Excellent clamping capability Low profile package Low inductance Excellent clamping capability Fast respons
Germanium Point Contact Diode, Type 1N60P,1N60,1N34A. DO-7 Glass Package. Germanium Chip. 1N60P(2-1K60) VR=40V, CJ=1PF. 1N60(1K60) VR=40V,CJ=1PF. 1N34A(1K34A) VR=70V, CJ=1PF Germanium Point Contact Diode, Type 1N60P,1N60,1N34A. DO-7 Glass Package. Germanium Chip.
65 15 2 310 1300 125 SPECIFICATION 61. SCHOTTKY DIODES KDS 2129A. 2A/15V. Die Size-65mil. Electrical Characteristics Symbol Unit Spec. limit Die Sort Breakdown Voltage @ IR=10mA VB V 20 22 Average Rectified Forward Current IF(AV) A 2,0 - DC Forward Voltage @ 25
