SG01D-5Lens Concentrator Lens SiC UV Photodiode

Minimum Order
1
Brand Name
Sglux
Place Of Origin
Germany
Packaging
N/A
Delivery
15 Days

SG01D-5LENS

‍‍Concentrator lens SiC based UV photodiode Avirtual =11.0 mm2‍‍


◆ SiC UV Photodiode SG01D-5Lens General features


Properties of the SG01D-5LENS UV photodiode
• Broadband UVA+UVB+UVC, PTB reported high chip stability, for fame detection
• Radiation sensitive area A =11.0 mm2
• TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
• 10µW/cm2 peak radiation results a current of approx. 350 nA


About the material Silicon Carbide (SiC)

SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity) is also low, < 0.1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably.

Options
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2 Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).


SiC UV Photodiode SG01D-5Lens Nomenclature


SiC UV Photodiode SG01D-5Lens Specifications‍

Parameter Symbol Value Unit




Spectral Characteristics


Typical Responsivity at Peak Wavelength Smax 0.130 AW-1
Wavelength of max. Spectral Responsivity λmax 280 nm
Responsivity Range (S=0.1*Smax) 221 … 358 nm
Visible Blindness (Smax/S>405nm) VB > 1010




General Characteristics (T=25°C)


Sensitive Area (chip size =0.50 mm2) A 11.0 mm2
Dark Current (1V reverse bias) Id 1.7 fA
Capacitance C 125 pF
Short Circuit (10µW/cm2 at peak) Io 350 nA
Temperature Coefficient Tc < 0.1 %/K




Maximum Ratings


Operating Temperature Topt -55 … +170 °C
Storage Temperature Tstor -55 … +170 °C
Soldering Temperature (3s) Tsold 260 °C
Reverse Voltage VRmax 20 V
  • Country: China (Mainland)
  • Business Type: Distributor/Wholesaler
  • Market:Europe, America, etc
  • Founded Year:2014
  • Address:sales@isweek.com
  • Contact:zy
more images of SG01D-5Lens Concentrator Lens SiC UV Photodiode
*Your name:
*Your Email:
*To:Week Technology LTD
*Subject:
*Message:
Enter between 20 to 3,000 characters. English only.     Characters : 0 / 3000
*Enter the secure code shown below Mfrbee security Image      Reload Image

submiting now We do inquire for you , please wait ...

SG01D-5Lens Concentrator Lens SiC UV Photodiode
SG01D-5Lens Concentrator Lens SiC UV Photodiode

SG01D-5LENS ‍‍Concentrator lens SiC based UV photodiode Avirtual = 11.0 mm2‍‍ ◆ SG01D-5Lens SiC UV Photodiode General features Properties of the SG01D-5LENS UV photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability, for fame detection • Radiation ...

ISweek company

SG01M-5Lens SiC UV Photodiode
SG01M-5Lens SiC UV Photodiode

SiC UV Photodiode SG01M-5LENS Concentrator lens SiC based UV photodiode Avirtual = 11.0 mm2 ◆ SiC UV Photodiode SG01M-5LENS General features Properties of the SG01M-5LENS SiC UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability,for very weak radiation • ...

Week Technology LTD